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2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196 2N5197 2N5198 2N5199
VGS(off) (V)
-0.7 to -4 -0.7 to -4 -0.7 to -4 -0.7 to -4
V(BR)GSS Min (V)
-50 -50 -50 -50
gfs Min (mS)
1 1 1 1
IG Max (pA)
-15 -15 -15 -15
jVGS1 - VGS2j Max (mV)
5 5 10 15
FEATURES
D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets.
TO-71
S1 1 D1 6
G2
2
5
D2
3 G1 Top View
4 S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70252 S-04031--Rev. D, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com
8-1
2N5196/5197/5198/5199
Vishay Siliconix
SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5196 2N5197
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current
Symbol
Test Conditions
IG = -1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA = 125_C VDG = 20 V, ID = 200 mA
Typa
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG VGS
-57 -2 3 -10 -20 -5
-0.8
-50 -0.7 0.7 -4
-50 -0.7 0.7 -4 V mA pA nA pA nA V
7
-25 -50 -15 -15
7
-25 -50 -15 -15
Gate Operating Current Gate-Source Voltage
-1.5
-0.2
-3.8
-0.2
-3.8
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs gos Ciss Crss en NF 2.5 VDS = 20 V, VGS = 0 V f = 1 kHz 2 0.8 1 3 VDS = 20 V, VGS = 0 V f = 1 MHz 1 9 0.7 1 4 50 1.6 4 6 2 20 0.5 0.7 1 4 50 1.6 4 6 pF 2 20 0.5 nV Hz dB mS mS mS mS
VDS = 20 V, ID = 200 mA f = 1 kHz
VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1-V GS2| D|V GS1-V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1-g os2| |I G1-I G2| CMRR VDG = 20 V, ID = 200 mA , TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = -55 to 125_C VDS = 20 V, VGS = 0 V 0.98 0.95 5 5 5 10 mV mV/_C
Saturation Drain Current Ratio
1
0.95
1
Transconductance Ratio
0.99 VDS = 20 V, ID = 200 mA f = 1 kHz 0.1
0.97
1
0.97
1 mS
Differential Output Conductance
1
1
Differential Gate Current Common Mode Rejection Ratioc
0.1 100
5
5
nA dB
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8-2
Document Number: 70252 S-04031--Rev. D, 04-Jun-01
2N5196/5197/5198/5199
Vishay Siliconix
SPECIFICATIONS FOR 2N5198 AND 2N5199 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5198 2N5199
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current
Symbol
Test Conditions
IG = -1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA
Typa
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG VGS
-57 -2 3 -10 -20 -5
-0.8
-50 -0.7 0.7 -4
-50 -0.7 0.7 -4 V mA pA nA pA nA V
7
-25 -50 -15 -15
7
-25 -50 -15 -15
Gate Operating Current Gate-Source Voltage
-1.5
-0.2
-3.8
-0.2
-3.8
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs VDS = 20 V, VGS = 0 V, f = 1 kHz gos gfs gos Ciss Crss en NF VDS = 20 V, VGS = 0 V, f = 1 MHz 2 0.8 1 3 1 9 0.7 50 1.6 4 6 2 20 0.5 0.7 50 1.6 4 6 2 20 0.5 pF nV Hz dB 2.5 1 4 1 4 mS mS mS mS
VDS = 20 V, ID = 200 mA f = 1 kHz
VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1-V GS2| D|V GS1-V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1-g os2| |I G1-I G2| CMRR VDG = 20 V, ID = 200 mA , TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = -55 to 125_C VDS = 20 V, VGS = 0 V 0.97 0.95 10 20 15 40 mV mV/_C
Saturation Drain Current Ratio
1
0.95
1
Transconductance Ratio
0.97 VDS = 20 V, ID = 200 mA f = 1 kHz 0.2
0.95
1
0.95
1 mS
Differential Output Conductance
1
1
Differential Gate Current Common Mode Rejection Ratioc
0.1 97
5
5
nA dB NQP
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
Document Number: 70252 S-04031--Rev. D, 04-Jun-01
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2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
5 3 gfs - Forward Transconductance (mS) 100 nA IG @ ID = 200 mA 10 nA TA = 125_C IG - Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA 50 mA
Gate Leakage Current
IDSS - Saturation Drain Current (mA)
4 gfs 3
IDSS
2.6
2.2
2
1.8
10 pA TA = 25_C 1 pA
IGSS @ 25_C
1
IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz
1.4
0 0 -1 -2 -3 -4 -5
1
0.1 pA 0 10 20 30 40 50 VDG - Drain-Gate Voltage (V)
VGS(off) - Gate-Source Cutoff Voltage (V)
Output Characteristics
5 VGS(off) = -2 V 4 ID - Drain Current (mA) ID - Drain Current (mA) 4 5
Output Characteristics
VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V 3 -0.9 V 2 -1.2 V -1.5 V 1 -1.8 V -2.1 V 0 20 0 4 8 12 -2.4 V 16
3
VGS = 0 V -0.2 V
2
-0.4 V -0.6 V
1
-0.8 V -1.0 V -1.2 V
0 0 4 8 12
-1.4 V 16
20
VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
Output Characteristics
2 VGS(off) = -2 V 1.6 ID - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V 0.4 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 -1.6 V 0.8 0 1 0 0.2 ID - Drain Current (mA) 2.0 2.5
Output Characteristics
VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V -0.9 V 1.5 -1.2 V 1.0 -1.5 V -1.8 V 0.5 -2.1 V
-2.4 V 0.4 0.6 0.8 1
VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
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Document Number: 70252 S-04031--Rev. D, 04-Jun-01
2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5 VGS(off) = -2 V 4 ID - Drain Current (mA) (mV) VDS = 20 V 100 VDG = 20 V TA = 25_C
Gate-Source Differential Voltage vs. Drain Current
3
TA = -55_C
VGS1 - VGS2
2N5199 10 2N5196
25_C 2
1
125_C
0 0 -0.5 -1.0 -1.5 -2.0 VGS - Gate-Source Voltage (V) -2.5
1 0.01 0.1 ID - Drain Current (mA) 1
Voltage Differential with Temperature vs. Drain Current
100 VDG = 20 V DTA = 25 to 125_C DTA = -55 to 25_C 130
Common Mode Rejection Ratio vs. Drain Current
DVDG DV GS1 - VGS2
( m V/ _C )
CMRR = 20 log 120
CMRR (dB)
2N5199 10
110 DVDG = 10 - 20 V 100 5 - 10 V 90
VGS1 - VGS2
Dt
2N5196
D
1 0.01
80 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1
Circuit Voltage Gain vs. Drain Current
rDS(on) - Drain-Source On-Resistance ( ) 100 1k
On-Resistance vs. Drain Current
80 AV - Voltage Gain
800
60 VGS(off) = -3 V VGS(off) = -2 V 40 AV + 20 g fs R L 1 ) R Lg os
600 VGS(off) = -2 V 400 VGS(off) = -3 V
Assume VDD = 15 V, VDS = 5 V 10 V RL + ID
200
0 0.01
0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1
Document Number: 70252 S-04031--Rev. D, 04-Jun-01
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8-5
2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance vs. Gate-Source Voltage
10 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
C iss - Input Capacitance (pF)
6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20
3
VDS = 0 V 5V
2
15 V
1 20 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20
Equivalent Input Noise Voltage vs. Frequency
20 VDS = 20 V gos - Output Conductance (S) 16 Hz ID @ 200 mA 12 2.0 2.5
Output Conductance vs. Drain Current
VGS(off) = -2 V VDS = 20 V f = 1 kHz
TA = -55_C 1.5
en - Noise Voltage nV /
8
VGS = 0 V
1.0
25_C
4
0.5
125_C
0 10 100 1k f - Frequency (Hz) 10 k 100 k
0 0.01
0.1 ID - Drain Current (mA)
1
Common-Source Forward Transconductance vs. Drain Current
2.5 gfs - Forward Transconductance (mS) VGS(off) = -2 V 2.0 TA = -55_C 1.5 25_C 1.0 VDS = 20 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( ) 1k
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
10
g os - Output Conductance ( mS)
800
gos
8
600
6
400
rDS
4
0.5
125_C
200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0
2
0 0.01 0.1 ID - Drain Current (mA) 1
0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V)
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Document Number: 70252 S-04031--Rev. D, 04-Jun-01

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